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Abstract
The present thesis is devoted to study the structural, dc,ac electrical properties and switching phenomenon of Se80Te15Ge5,Se80Te13Ge7 and Se80Te10Ge10 film compositions.
i)The structural properties of Se80Te15Ge5, Se80Te13Ge7 and Se80Te10Ge10 compositions are investigated as follows:
1- X-ray diffraction patterns XRD were used to study the structure properties of Se80Te15Ge5, Se80Te13Ge7 and Se80Te10Ge10 compositions.
2-Differential thermal analysis DTA was carried out for the as prepared investigated compositions in powder form with a temperature rate of 10deg./min.
ii) Electrical properties were studied for Se80Te15Ge5, Se80Te13Ge7 and Se80Te10Ge10 thin films including:
(1) Dc conductivity: Dc measurements include the temperature, thickness and compositional dependences of the dc electrical conductivity and the calculation of dc conduction activation energy.
(2) Switching phenomenon: It includes static and dynamic I-V characteristic curves, temperature and thickness dependences of the switching voltage, determination of the switching voltage and power activation energies , and determination of the switching mechanism.
(3) Ac conductivity and dielectric properties: Ac measurements include ac electrical conductivity, dielectric constant, dielectric loss as a function of both frequency and temperature.